feb.1999 application inverters, converters, dc choppers, induction heating, dc to dc converters. outline drawing dimension in mm mitsubishi gate turn-off thyristors FG2000JV-90DA high power inverter use press pack type FG2000JV-90DA a a a ka a 2 s a/ m s v v a a w kw w w c c kn g i tqrm i t(rms) i t(av) i tsm i 2 t d it /d t v fgm v rgm i fgm i rgm p fgm p rgm p fg(av) p rg(av) t j t stg 2000 940 600 13 7 10 5 500 10 17 50 700 250 23.8 50 150 C40 ~ +125 C40 ~ +150 18 ~ 24 760 v rrm v rsm v r(dc) v drm v dsm v d(dc) v v v v v v 90da 17 17 17 4500 4500 3600 + : v gk = C2v auxiliary cathode connector (red) 356 ?8 gate (white) f 3.5 ?0.2 depth 2.2 ?0.2 cathode 0.4 min 0.4 min type name anode f 63 ?0.5 f 63 ?0.5 f 93 max 26 ?0.5 f 3.5 ?0.2 depth 2.2 ?0.2 i tqrm repetitive controllable on-state current ............. 2000a i t(av) average on-state current ...................... 600a v drm repetitive peak off state voltage ........ 4500v anode short type maximum ratings voltage class symbol repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage + non-repetitive peak off-state voltage + dc off-state voltage + parameter unit unit ratings symbol parameter conditions repetitive controllable on-state current rms on-state current average on-state current surge (non-repetitive) on-state current current-squared, time integration critical rate of rise of on-state current peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate reverse current peak forward gate power dissipation peak reverse gate power dissipation average forward gate power dissipation average reverse gate power dissipation junction temperature storage temperature mounting force required weight v d = 2250v, v dm = 3375v, t j = 125 c, c s = 4.0 m f, l s = 0.3 m h f = 60hz, sine wave q = 180 , t f = 91 c one half cycle at 60hz one cycle at 60hz v d = 2250v, i gm = 30a, t j = 125 c recommended value 20 standard value
feb.1999 t j = 125 c, i tm = 2000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 17v t j = 125 c, v d = 2250v, v gk = C2v t j = 125 c, i tm = 2000a, i gm = 30a, v d = 2250v junction to fin dc method : v d = 24v, r l = 0.1 w , t j = 25 c mitsubishi gate turn-off thyristors FG2000JV-90DA high power inverter use press pack type v ma ma ma v/ m s m s a v a c/w v tm i rrm i drm i rg d v /d t t gt i gqm v gt i gt r th(j-f) t gq t j = 125 c, i tm = 2000a, v d = 2250v, v dm = 3375v, d igq /d t = C30a/ m s, v rg = 17v, c s = 4.0 m f, l s = 0.3 m h 30 m s 570 1000 10 0 23 5710 1 8 4 23 445710 2 12 16 20 6 2 10 14 18 0 01234567 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 t j = 125? 10 0 23 10 ? 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v fgm = 10v v gt = 1.5v p fg(av) = 50w i fgm = 50a t j = 25? p fgm = 250w i gt = 2.5a 0.025 0 23 10 ? 5710 ? 23 10 0 5710 1 23 5710 ? 23 5710 0 0.010 0.015 0.020 0.005 on-state current (a) on-state voltage (v) maximum on-state characteristic surge on-state current (ka) conduction time (cycles at 60hz) rated surge on-state current thermal impedance (?/ w) time (s) maximum thermal impedance characteristic (junction to fin) gate voltage (v) gate current (ma) gate characteristics 3.5 100 100 100 10 1.5 2.5 0.017 performance curves on-state voltage repetitive peak reverse current repetitive peak off-state current reverse gate current critical rate of rise of off-state voltage turn-on time peak gate turn-off current gate trigger voltage gate trigger current thermal resistance electrical characteristics symbol parameter test conditions limits min typ unit max turn-off time
feb.1999 mitsubishi gate turn-off thyristors FG2000JV-90DA high power inverter use press pack type 0 400 800 1200 1600 2000 200 600 1000 1400 1800 0 600 100 200 300 400 500 120 180 60 90 q 360 0 200 600 400 1000 800 1200 1400 1600 1800 2200 2000 2400 0 200 400 600 800 1000 dc 270 q = 30 120 180 60 90 360 q 60 70 80 90 100 110 120 130 140 0 200 400 600 800 1000 q = 30 60 90 120 dc 270 360 q 180 0 2 4 6 8 10 12 14 16 0 10203040 60 50 t gt t d i t = 2000a v d = 2250v d it /d t = 500a/ m s d ig /d t = 10a/ m s t j = 125? 60 70 80 90 100 110 120 130 140 0 100 200 300 400 500 600 q 360 q = 30 60 90 180 120 8 6 5 3 1 0 160 ?0 0 40 80 120 2 4 7 v d = 24v r l = 0.1 w i gt v gt q = 30 dc method on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (single-phase half wave) fin temperature (?) average on-state current (a) allowable fin temperature vs. average on-state current (single-phase half wave) fin temperature (?) average on-state current (a) allowable fin temperature vs. average on-state current (rectangular wave) gate trigger current (a), gate trigger voltage (v) junction temperature (?) gate trigger current, gate trigger voltage vs. junction temperature (maximum) turn on time t gt , turn on delay time t d ( m s) turn on gate current (a) turn on time, turn on delay time vs. turn on gate current (typical) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (rectangular wave) resistive, inductive load resistive, inductive load resistive, inductive load resistive, inductive load
feb.1999 mitsubishi gate turn-off thyristors FG2000JV-90DA high power inverter use press pack type 700 600 500 400 300 200 2500 0 500 1000 1500 2000 v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 50 40 30 20 10 0 10 20 30 40 60 50 t gq t s v d = 2250v v dm = 3375v i t = 2000a v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 800 700 600 500 400 300 60 10 20 30 40 50 v d = 2250v v dm = 3375v i t = 2000a v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 30 25 20 15 10 5 2500 0 500 1000 1500 2000 t gq t s v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 4.0 m f l s = 0.3 m h t j = 125? 0 0.8 1.6 2.4 0.4 1.2 2.0 0 800 2400 2000 400 1200 1600 v d = 2250v i gm = 30a d ig /d t = 10a/ m s c s = 4.0 m f r s = 5 w t j = 125? d it /d t = 300a / m s 200a / m s 100a / m s 0 2.0 4.0 6.0 1.0 3.0 5.0 0 800 2400 2000 400 1200 1600 6 m f 4 m f c s = 2 m f v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v l s = 0.3 m h t j = 125? rate of rise of turn off gate current (a / m s) turn off gate current (a) rate of rise of turn off gate current (a / m s) turn off gate current vs. rate of rise of gate current (typical) switching energy eon (j/p) turn on current (a) turn on switching energy (maximum) turn off gate current (a) turn off current (a) turn off gate current vs. turn off current (typical) switching energy eoff (j/p) turn off current (a) turn off switching energy (maximum) turn off time t gq, turn off storage time t s ( m s) turn off current (a) turn off time, turn off storage time vs. turn off current (typical) turn off time t gq , turn off storage time t s ( m s) turn off time, turn off storage time vs. rate of rise of turn off gate current (typical)
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